Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

Abstract We investigated the process parameters of high temperature MOCVD (HT-MOCVD) numerical model for AlN growth based on CFD simulation using orthogonal test design. It is believed that condition favorable improving efficiency and crystallization quality film, while flow field in HT-MOCVD reactor closely related to parameters, which will affect uniformity film. An independently developed conceptual was established carry out simulation. To evaluate role systematically efficiently uniformity, were analyzed The advantages range, matrix variance methods considered results comprehensively optimal obtained as follows, susceptor rotational speed 400 rpm, operating pressure 40 Torr, gas rate 50 slm, substrate 1550 K.